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Brand Name : Cypress
Model Number : FM24CL64B-GTR
Certification : CE, GCF, ROHS
Place of Origin : China
MOQ : 1
Price : Negotiable
Payment Terms : T/T, Western Union,
Supply Ability : 1000pcs per month
Delivery Time : 3-5 working days after received the payment
Packaging Details : Packed in original tray firstly ,then carton, at last Bubble bag for outer packing
Function : Step-Up, Step-Down
Output Configuration : Positive or Negative
Topology : Buck, Boost
Output Type : Adjustable
Number of Outputs : 1
FM24CL64B-GTR
Features
■ 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K × 8
❐ High-endurance 100 trillion (1014) read/writes
❐ 151-year data retention (See Data Retention and Endurance on page 10)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
■ Fast 2-wire Serial interface (I2C)
❐ Up to 1-MHz frequency
❐ Direct hardware replacement for serial (I2C) EEPROM
❐ Supports legacy timings for 100 kHz and 400 kHz
■ Low power consumption
❐ 100 A (typ) active current at 100 kHz ❐ 3 A (typ) standby current
■ Voltage operation: VDD = 2.7 V to 3.65 V
■ Industrial temperature: –40 C to +85 C
■ Packages
❐ 8-pin small outline integrated circuit (SOIC) package
❐ 8-pin thin dual flat no leads (DFN) package
■ Restriction of hazardous substances (RoHS) compliant
Functional Description
The FM24CL64B is a 64-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories.
Unlike EEPROM, the FM24CL64B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. Also, F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. The FM24CL64B is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM.
These capabilities make the FM24CL64B ideal for nonvolatile memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system.
Information
Category | | |
Mfr | | |
Series | | |
Packaging | Tape & Reel (TR) Cut Tape (CT ) Digi-Reel | |
Part Status | Active | |
DigiKey Programmable | Verified | |
Memory Type | Non-Volatile | |
Memory Format | | |
Technology | FRAM (Ferroelectric RAM) | |
Memory Size | | |
Memory Organization | 8K x 8 | |
Memory Interface | I2C | |
Clock Frequency | 1 MHz | |
Write Cycle Time - Word, Page | - | |
Access Time | 550 ns | |
Voltage - Supply | 2.7V ~ 3.65V | |
Operating Temperature | -40°C ~ 85°C (TA) | |
Mounting Type | Surface Mount | |
Package / Case | | |
Supplier Device Package | 8-SOIC | |
Base Product Number |
Drawing
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FM24CL64B-GTR 64Kb FRAM I2C 1MHz 10^14 Endurance 151yr Retention NoDelay Writes 3.6V Max, SOIC-8 -40°C~85°C Images |